Amplifier circuit, which gives an amplified output signal as a function of complementary input signals supplies

摘要

The DRAM sense amplifier (30) contains 'current mirror' configured PMOS FET's (1,3), with switching transistors (22,21) connected to preamplifier activation signal input (PAE). Gates of the 'current mirror' PMOS FET's are connected to junction of the second PMOS and a second NMOS FET (3,4). A differential input signal (/VI,VI) is input to NMOS FET's (2,4). In operation the circuit is activated by a high level signal on PAE, turning a transistor (7) on, and further transistors (10,11,22) off. For a low level on the input (VI), three transistors (1,3,4) turn off, one transistor (21) turns on. The /VI transistor (2) switches in response to a high level on input (/VI) to output low level at the output (VO). USE/ADVANTAGE - For DRAM applications. Use of current mirror and complementary transistors configuration implements fast low-power sense amplifier.