Fine, highly accurate resist pattern prodn. using positive photoresist - contg. naphtho-quinone-di:azide and novolak resin with alkaline coating, pref. contrast enhancing or antireflective coating

摘要

Prodn. of a fine resist pattern comprises: (a) coating a substrate (4) with a positive photoresist (1) with naphthoquinone- diazide and novolak resin; (b) coating this with an alkaline layer (9, 10); (c) selective exposure of these coats; and (d) development of the photoresist. Pref., the alkaline layer is pref. a contrast-enhancing or antireflective coating and pref. contains a water-soluble polymers, esp. PVA, polyacrylic acid or poly-vinylamine, and a refractive index regulator, esp. a fluorinated polymer or fluorinated surfactant. It is rendered alkaline, pref. to pH no less than 10, with an organic alkali, pref. NMe4OH, pref. to make the surface of the photoresist insol. The combined coatings are baked at 80-100 deg. C before exposure. USE/ADVANTAGE - The process is esp. suitable for the antireflective coating on resist (ARCOR) process and contrast enhanced photolithography (CEL) technology. A fine, precise resist pattern can be obtd.