Vessel for growing thin films by isothermal vapor phase epitaxy

摘要

A growth vessel (10) comprises a crucible (12) for containing the source materials within its cavity (26), a substrate carrier (15, 115) positioned on inner shoulder 27 of the crucible sidewalls (22-25), a source tray (14) positioned within the crucible cavity (26), at least one spacer (13) positioned between the bottom of the crucible cavity (26) and the source tray (14), a substrate carrier (15, 115) positioned within the crucible cavity (26) for mounting a substrate parallel to the source of growth material in the source tray (14), and a crucible lid (17, 117).