Chemical vapor deposition of titanium and titanium containing films using bis (2,4-dimethylpentadienyl) titanium as a precursor

摘要

A process is disclosed for creating highly-conformal titanium- containing films via chemical vapor deposition using bis(2,4- dimethylpentadienyl) titanium, an analog thereof, or a Lewis-base- stabilized form thereof, as a precursor. The deposition process takes place in a low-pressure chamber. A substrate within the chamber, and on which the film is to be deposited, is heated to a temperature within a range of about 300-600° C. In one embodiment of the invention, titanium precursor compound vapor is admitted to the chamber either solely or in combination with one or more carrier gases. In another embodiment, titanium precursor compound vapor in combination with one or more carrier gases and/or other vapor phase reactants are admitted to the chamber.