Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates

摘要

A fabrication process polycrystalline silicon thin film transistors commences with the deposition of an ultra-thin nucleating- site forming layer onto the surface of an insulating substrate (e.g., 7059 glass). Next, an amorphous silicon film is deposited thereover and the combined films are annealed at temperatures that do not exceed 600° C. By patterning the deposition of the nucleating site forming material on the glass substrate, the subsequently deposited amorphous film can be selectively crystallized only in areas in contact with the nucleating- site forming material.