首页> 外国专利> Semiconductor device having structures to reduce stress notching effects in conductive lines and method for making the same

Semiconductor device having structures to reduce stress notching effects in conductive lines and method for making the same

机译:具有减少导线中的应力缺口效应的结构的半导体器件及其制造方法

摘要

A semiconductor device has structures to reduced stress notching effects in conductive lines. In one form, the semiconductor device includes a semiconductor die which has a plurality of active conductive lines thereon. The plurality of conductive lines collectively has a first and a second outside edge. In close proximity to each of the first and the second outside edges is a stress reducing line. Each of the stress reducing lines is a non-active structure (in other words does not transmit signals) and functions to reduce stress concentrations on the plurality of active conductive lines which are imposed by overlying insulating and passivation layers. As a result of weakened stress concentrations, the amount of stress notching in the active conductive lines is reduced.
机译:半导体器件具有减小导线中的应力缺口效应的结构。在一种形式中,半导体器件包括其上具有多条有源导线的半导体管芯。多条导线共同具有第一和第二外边缘。应力减小线紧邻第一和第二外部边缘中的每一个。每条应力减小线是非有源结构(换句话说,不传输信号),并且用于减小在绝缘层和钝化层之上施加的多条有源导线上的应力集中。由于应力集中的减弱,有源导线中的应力缺口数量减少了。

著录项

  • 公开/公告号US5317185A

    专利类型

  • 公开/公告日1994-05-31

    原文格式PDF

  • 申请/专利权人 MOTOROLA INC.;

    申请/专利号US19920836169

  • 发明设计人 HISAO KAWASAKI;MARK G. FERNANDES;

    申请日1992-02-18

  • 分类号H01L21/88;

  • 国家 US

  • 入库时间 2022-08-22 04:31:40

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