首页> 外国专利> Assymetric quantum well infrared detector

Assymetric quantum well infrared detector

机译:非对称量子阱红外探测器

摘要

An electromagnetic wave detector has several stacks of layers of semiconducting materials. Each stack constitutes an asymmetrical quantum well with stepped barrier and has two energy levels, one of which is located beneath the energy level of the intermediate barrier step while the other is located above it. Means are used to apply an electric field to the structure.
机译:电磁波检测器具有几层半导体材料。每个堆叠构成具有阶梯势垒的不对称量子阱,并具有两个能级,一个能级位于中间势垒台阶的能级之下,而另一个能级位于中间势垒台阶的能级之下。装置用于向结构施加电场。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号