Semiconductor device with a dual type polycide layer comprising a uniformly p-type doped silicide

摘要

A semiconductor device comprising a semiconductor substrate, an insulating film formed on the semiconductor substrate, and a polycide film including a polysilicon layer and a silicide layer formed on the insulating film. The polysilicon layer includes a p-type region having p- type impurities diffused therein and an n-type region having n-type impurities diffused therein. The p-type impurities are implanted into the silicide layer in order to have a substantially uniform concentration over the entire potion thereof, so that the p-type impurities in the p- type region of the polysilicon layer do not diffuse into the silicide film by a poet heat treatment.