ISFET and ISFET probe and ISFET pH sensor using the same

摘要

There is provided an ISFET structure and a method for manufacturing that structure such that external electrical contact to the P+ source and drain regions (18,20) is made through individual holes etched from the back to the source and drain regions with sidewall isolation being provided in the holes and metallization (28,30) covering the surface of said sidewalls and extending to contact pads on the back of the ISFET.