Tungsten nitride thin film deposition method of the silicon semiconductor element and the metal wiring formation method of a two-layer structure using the same

摘要

PURPOSE: To effectively suppress a wafer erosion due to fluorine (F) atoms and to produce a satisfactory metal wiring at the time of tungsten film vapor deposition, without losing the advantages of a tungsten film. ;CONSTITUTION: When forming a metal wiring by vapor deposition of the tungsten film to a silicon semiconductor device through a low-pressure chemical vapor deposition(CVD), as the pre-stage process of tungsten film vapor deposition, the input divided pressure component ratio of NH₃/WF₆ is set to 0.25-1.5, and the tungsten nitride film is grown to the thickness from 500-1000Å by plasma CVD under conditions of vapor deposition temperature from 300-600°C and pressure of 0.1-1.0Torr. Further, the metal wiring in double layer structure is formed by forming the tungsten film on the tungsten nitride film through low-pressure CVD. Thus, the corrosion of silicon, oxide film and oxide film/ silicon interface due to F atoms generated at the time of tungsten film vapor deposition can be prevented.;COPYRIGHT: (C)1993,JPO