Method for depositing tungsten nitride thin films for formation of metal wirings of silicon semiconductor elements

摘要

A method for depositing tungsten nitride thin films prior to a formation of tungsten thin films using the plasma-enhanced chemical vapor deposition, capable of restraining an occurrence of corrosions at a silicon substrate, an oxide film and boundary surfaces thereof, during the formation of tungsten thin films. The deposition of tungsten nitride thin film is carried out using a plasma-enhanced chemical vapor deposition at a deposition temperature of 300° C. to 600° C. and a deposition pressure of 0.1-1 Tort while maintaining a NH.sub.3 /WF. sub. 6 partial pressure ratio at a range of 0.25 to 2. The obtained tungsten nitride thin film exhibits very low resistivity of 70 &mgr;&OHgr; -cm to 300 &mgr;&OHgr;-cm and effectively restrains an occurrence of corrosions at a silicon substrate, an oxide film and boundary surfaces thereof, during the formation of tungsten thin films using the plasma- enhanced chemical vapor deposition.