FORMING METHOD FOR DONOR-DOPED PEROVSKITE MATERIAL FOR THIN FILM DIELECTRIC MATERIAL AND STRUCTURE CONTAINING SUCH MATERIAL

摘要

PURPOSE: To maximize the permittivity of a thin-film perovskite material by performing the doping of the perovskite material, without keeping a board at high temperature. CONSTITUTION: The permittivity of a perovskite material becomes higher under its Curie temperature accordingly, as its crystal grain size becomes smaller. A donar dopant makes the crystal grain size of the perovskite material smaller. Accordingly, as a result of performing the doping of an intrinsic perovskite material with donar dopants and then forming a donor-doped perovskite material layer, having average grain size smaller than its intrinsic critical crystal grain size, the permittivity of this layer is mage higher than that of the intrinsic material which has an average crystal grain size similar to the average crystal grain size of this layer. It is preferable that doping with acceptor dopants be performed, in addition to making the resistance of this material higher and/or to make its dielectric tangent smaller. The construction on the board surface comprizes a conductive layer and the layer of this donor-doped perovskite material which is in touch with this.