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LEAD FRAME MATERIAL FOR LARGE-CAPACITY DRAM AND LARGE-CAPACITY DRAM

机译:大容量DRAM和大容量DRAM的引线框架材料

摘要

PURPOSE: To obtain a lead frame material by which the coefficient of thermal expansion of an epoxy resin is matched well with that of an Si chip, whose yield rate is enhanced and whose costs are lowered by a method wherein the lead frame material is formed of an Fe-Ni alloy whose Ni content is specific. ;CONSTITUTION: An Fe-Ni alloy whose Ni content is at 33 to 39wt.% is rolled to be a lead frame material, and a stamping and working process is executed. After that, a die bonding process in which an Si chip for a DRAM is bonded to an island and a wire bonding process in which leads are bonded to the Si chip are executed. The die bonding process is executed by adopting an Ag-paste bonding method so as to be heated to 150 to 200°C, and the wire bonding process is executed by adopting an Au-wire thermocompression-bonding method so as to be heated to 250 to 300°C. A lead frame which has finished the processes is formed as a package after an epoxy resin has been filled and heated up to 400°C, the leads are cut and bent, and the DRAM is completed.;COPYRIGHT: (C)1995,JPO
机译:用途:获得一种引线框材料,通过该引线框材料通过以下方法形成了引线框材料,所述引线框材料的环氧树脂的热膨胀系数与硅片的热膨胀系数很好地匹配,该引线框材料的产率提高并且成本降低。一种镍含量特定的铁镍合金。 ;组成:将Ni含量为33-39wt。%的Fe-Ni合金轧制成引线框架材料,并执行冲压和加工工艺。之后,执行将用于DRAM的Si芯片键合到岛上的管芯键合工艺和将引线键合到Si芯片上的引线键合工艺。芯片键合工艺通过采用Ag-糊剂键合方法执行以加热至150至200°C,而引线键合工艺通过采用Au-wire热压键合方法执行以加热至250°C。至300°C。在填充环氧树脂并将其加热到400°C之后,将完成工艺的引线框架封装成一个包装,将引线切割并弯曲,然后制成DRAM .;版权所有(C)1995,JPO

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