REACTIVE ION CLUSTER BEAM VAPOR DEPOSITION METHOD AND ITS DEVICE

摘要

PURPOSE: To execute vapor deposition by increasing the concn. of reactive gases without destroying clusters and to improve the forming sate and characteristics of films by separating a vacuum region to an acceleration electrode section and a reaction section. ;CONSTITUTION: The vacuum region is separated to two chambers by a partition wall 2. A hermetically sealed crucible 5, an electron shower device 7 and the acceleration electrode 8 are arranged in the first vacuum region section 3 lower than this partition wall 2. A traveling substrate 13 and a reactive gas introducing pipe 15 are arranged in the second vacuum region section 4 upper than the partition wall 2. The vacuum degree of the second vacuum region is set to the same as the vacuum degree of the first vacuum region or is slightly lower than the same and while the concn. of the reactive gases is maintained, an ionized cluster beam 16 is introduced from an aperture 9 of the partition wall 2 and is brought into reaction with the reactive gases so as to collide against the substrate film 13. The vapor pressure P₀ of the material to be deposited by evaporation in the hermetically sealed crucible with respect to the pressure P on the outer side is set p₀/P about 10⁴ to 10₆ and the vapor is spouted from an evaporating section 5a.;COPYRIGHT: (C)1995,JPO