REACTIVE SPUTTERING DEVICE AND REACTIVE SPUTTERING METHOD AS WELL AS REACTIVE VAPOR DEPOSITION DEVICE AND REACTIVE VAPOR DEPOSITION METHOD

摘要

PURPOSE: To decrease the fluctuations in the compsn. in the thickness direction of films in the case where the films are simultaneously formed on the surfaces of many substrates or the films are formed on a large-area substrate in a reactive sputtering method and reactive vapor deposition method. ;CONSTITUTION: A device which executes sputtering while rotating a substrate holder 53 holding the plural substrates 1, or a device which executes sputtering while moving the large-area substrate in parallel right above a target or a device for executing vapor deposition while moving the large-area substrate in parallel right above a vapor deposition source is provided with a mask means 63 covering the surface of the substrate and is provided with an aperture near a position facing the target 51 of the mask means or the vapor deposition source. The deposition of the active species of reactive gases is suppressed on the surface of the substrate 1 covered with the mask means 63 and the sputtered films or vapor deposited films are formed on the surface of the substrate 1 near the aperture of the mask means 63 when the active species depositable as solids on the substrate are used as the reactive gases.;COPYRIGHT: (C)1996,JPO