首页> 外国专利> CHIP TYPE SURGE ABSORBER USING MICRO-GAP METHOD

CHIP TYPE SURGE ABSORBER USING MICRO-GAP METHOD

机译:微间隙法芯片型涌流吸收器

摘要

PURPOSE: To provide a chip type surge absorber using a micro-gap method wherein an electronic-apparatus protecting function is obtained by its absorption of an instantaneous surge voltage, and in addition to this, the adjustment of its electrostatic capacitance is made easy when it is manufactured, and by its chip type configuration, it can be mounted on the surface of a printed circuit board, etc., and further, its discharge starting voltage is not varied by the condition of the atmosphere. ;CONSTITUTION: A pair of insulation boards 13, 14 is superimposed in parallel on each other while a predetermined micro-gap 12 is interposed between the boards 13, 14 by the sandwichings of insulation spacers 11, 11 between them. In both the end parts of the boards 13, 14, a pair of terminal electrodes 16, 17 is provided. On the opposite surface of the one board 13 to the board 14, a conductive thin film 18 whose one end is connected electrically with the terminal electrode 16 is formed, and on the opposite surface of the other board 14 to the board 13, a conductive thin film 19 whose one end is connected electrically with the terminal electrode 17 is formed. A sealed space may be formed by the used of the boards 13, 14 and the insulation spacers 11, 11, and an inert gas may be filled into this sealed space.;COPYRIGHT: (C)1995,JPO
机译:用途:提供一种使用微间隙法的芯片型电涌吸收器,其中通过吸收瞬时电涌电压来获得电子设备保护功能,此外,当静电电击电压很小时,其静电电容的调整变得容易通过制造其芯片类型的结构,可以将其安装在印刷电路板等的表面上,此外,其放电开始电压不会因环境条件而变化。组成:一对绝缘板13、14彼此平行叠置,同时预定的微间隙12通过绝缘垫片11、11夹在其间而置于板13、14之间。在基板13、14的两个端部中,设置有一对端子电极16、17。在一个板13的与板14相对的表面上,形成其一端与端子电极16电连接的导电薄膜18,并且在另一板14的与板13相对的表面上,形成导电膜18。形成其一端与端子电极17电连接的薄膜19。可以通过使用板13、14和绝缘垫片11、11形成密封空间,并且可以在该密封空间中填充惰性气体。;版权所有:(C)1995,JPO

著录项

  • 公开/公告号JPH07245878A

    专利类型

  • 公开/公告日1995-09-19

    原文格式PDF

  • 申请/专利权人 MITSUBISHI MATERIALS CORP;

    申请/专利号JP19940031119

  • 发明设计人 TANAKA YOSHIYUKI;HARADA MIKIO;

    申请日1994-03-01

  • 分类号H02H9/04;H01T4/10;H01T4/12;

  • 国家 JP

  • 入库时间 2022-08-22 04:24:33

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号