HIGH-RELIABILITY INTEGRATED-CIRCUIT STRUCTURE FOR MOS POWER DEVICE

摘要

PURPOSE: To enable appropriate operation of an integrated circuit, even on the occurrence of failures by connecting a plurality of source terminals and drain terminals of cells such that gate terminals are structurally independent of each other. ;CONSTITUTION: In a circuit structure 1, including power transistors 2, cells 5 are interconnected only via source S and drain D terminals of respective corresponding MOS power transistors 2. In the respective MOS power transistors 2, gate terminals G are structurally independent of each other. In the circuit structure, all the source terminals S are commonly provided or connected together on one side, and similarly, the drain terminals D are connected on the other side. By this arrangement, even if short circuit occurs in one cell, normal operation of the entire circuit can be maintained.;COPYRIGHT: (C)1994,JPO