METHOD OF REDUCING ETCHING DAMAGE TO SEMICONDUCTOR DEVICE

摘要

PURPOSE: To improve the quality of a gate oxide by exposing an etched semiconductor device, containing a damaged silicon layer, to the descending-stream plasma of forming gas, containing hydrogen and nitrogen, so that regrowth of oxide is increased. ;CONSTITUTION: When a semiconductor device in which a plurality of layers, containing a silicon dioxide layer are provided on the surface of a silicon layer is etched with an etchant material, the etchant material reacts upon the silicon dioxide layer of the semiconductor device, so the silicon layer is damaged. After this, the etched semiconductor device containing the damaged silicon layer is post-treated with after-etching forming gas plasma, containing hydrogen and nitrogen. So that the regrowth of oxide of the damaged silicon layer and perfectness of a gas oxide are essentially increased. Thereby the damage on the silicon layer is reduced, and perfectness of the gate oxide is enhanced, and the performance of the semiconductor device is improved.;COPYRIGHT: (C)1995,JPO