Test structure for measuring misalignment between levels in microelectronic technologies, based mos transistors triangular door

摘要

THE STRUCTURE OF TEST FOR THE MEASUREMENT misalignment between LEVELS OF TECHNOLOGIES MicroImager, BASED TRANSISTORS MOS DOOR TRIANGULAR IS A microelectronic device comprising four MOS transistors WITH DOOR TRIANGULAR, arranged at 90 EACH, WITH TERMINALS SOURCE STATES, SENSIBLE misalignment between levels DOOR AND ACTIVE AREAS IN TECHNOLOGY self-aligned. Misalignment OBTAINED FROM THE EXTENT OF CURRENT IN EACH CHANNEL TRANSISTORS, polarize them in the linear region or in the saturation.