Test structure for measuring the lateral diffusion in technologies doped polysilicon from, with correction of misalignment

摘要

THE STRUCTURE OF TEST FOR MEASURING lateral diffusion in IT FROM doped polysilicon, misalignment correction DEVICE IS A COMPOUND VARIOUS hollowing MOS transistors of different sizes, CONTACTS WITH A BURIED arranged alternately left and right. THE STRUCTURE MUST CONTAIN AT LEAST FOUR TRANSISTORS ALTHOUGH THE IMPLEMENTATION practice presented contains nine. THE MEASURE IS PERFORMING BY TYPE LINEAR ELECTRIC ADJUSTMENTS REVERSE the drain current REGARDING lengths of transistors. YOUR APPLICATION IS IN SECURING MEASURES BY AUTOMATIC ELECTRICAL LENGTH lateral diffusion AUTODOPADO PROCESSES FROM polycrystalline material.