Test structure for measuring the misalignment between levels in microelectronic technologies based on MOS transistors with triangular gate

摘要

The test structure for measuring the misalignment between levels in microelectronic technologies based on MOS transistors with triangular gate is a microelectronic device comprised of four MOS transistors with the triangular gate, distributed forming 90 degrees between them, with the source terminals joined, sensitive to the misalignment between the gate levels and the active areas in auto-aligned technologies. The misalignment is obtained from the measurement of the channel current in each one of the transistors, polarising these in the linear area or in the saturation.