SEMICONDUCTOR COMPONENT DESIGNED FOR VERTICAL INTEGRATION, AND METHOD OF MANUFACTURING THE COMPONENT

摘要

The upper surface of the component proposed has a layer structure including an insulating layer (7) with a hole in it, a contact metallization (8) being applied to the upper surface of the insulating layer and to an area of metallization intended for electrical contacting, and subsequently being featured. A metal contact post (12) fills the hole in the covering dielectric, the post resting on the contact metallization (8) in such a way that it can elastically move on the free end of the contact metallization in the hole (14) of the component, the other end of the contact metallization being anchored in the layer structure. This permits reversible contacting of the component with another component disposed vertically above it. It is possible to bring the planar upper surfaces of the two components into intimate contact with each other since the post (12) which is pressed against a contact (15) on the other component is pushed back into the hole (14), the springiness of the contact metallization (8) ensuring a sufficiently reliable electrical connection between the contacts.