Semiconductor device for vertical direction integration and manufacturing method (SEMICONDUCTOR COMPONENT DESIGNED FOR VERTICAL INTEGRATION, AND METHOD OF MANUFACTURING THE COMPONENT)

摘要

The upper surface of the presented device has a layer structure comprising an insulating layer 7 with a hole, and the contact metallization 8 is provided on the upper surface of the insulating layer and in the region of the metallization for electrical contact. do. A metal contact post 12 fills a hole in the covering dielectric, which remains in the contact metallization so that it can resiliently move from the hole 14 of the device to the open end of the contact metallization. The other end of the contact metallization is fixed to the layer structure. This allows reverse contact of the device with other devices arranged vertically thereon. The planar upper surfaces of the two elements can be brought into contact with each other, since the post 12 pressing against the contact 15 on the other element is pushed back into the hole 14, the elastic force of this contact metallization between the contacts. Ensures a sufficiently reliable electrical contact.