DYNAMIC RANDOM ACCESS MEMORY HAVING REELECTED LAYOUT AND LAYOUT DESIGN THEREOF

摘要

a number of active zones(8-7, 8-8, 8-9, 8-10, 8-11) for each memory cell formed in a common substrate using the same diffusion process for providing diffusion zones of 2 adjacent cells, separated by a channel zone; word lines(8-5, 8-15) extending at an angle to the channel zones, and perpendicularly to evenly spaced bit lines(8-3); capacitors extending longitudinally between the adjacent bit lines(8-3) and sidewords between 2 adjacent word lines(8-5, 8-15); and an insulation layer having contact holes(8-2, 8-4) for connecting the first diffusion zones to the capacitors and the contact holes(8-2, 8-4) for connecting the second diffusion zones to the bit lines(8-3). The memory layout can arrange the memory cells to be highly integrated.