Transistor impulse breakdown characteristic measuring device

摘要

The present invention relates to an apparatus for measuring an impulse breakdown characteristic of a transistor, and more particularly, to an apparatus for measuring an impulse breakdown characteristic of a transistor, in which a current value at a different level is applied to a collector side of a transistor, /RTI ;That is, according to the present invention, the current value of the constant current power supply 30 is selected and applied to the collector side of the transistor Q to be measured as in FIG. 1, and whether or not the transistor Q to be measured is broken is detected And a display device 20 for indicating a selection current value of the constant current power supply device 30 and a breakdown of the transistor Q to be measured.