Rinse and dry method after wafer hydrofluoric acid treatment

摘要

The present invention relates to a process for rinsing and drying a wafer after hydrofluoric acid treatment using a HF solution, removing HF remaining on the surface of the wafer using IPA (isopropylalcohol) And removing the IPA on the surface of the wafer by blowing nitrogen while applying a temperature of 84 [deg.] C. The present invention relates to a rinse and drying method after the wafer hydrofluoric acid treatment, wherein the IPA rinse method is used instead of the pure water rinse, The IPA is applied to the hydrophobic area exposed to the surface of the wafer after the hydrofluoric acid treatment. Therefore, it is possible to suppress the water mark produced by the local drying time difference during drying, and the oven drying The cost can be drastically reduced.