Methods for high temperature water rinsing and drying of silicon wafers after being cleaned in hydrofluoric acid

摘要

Methods are disclosed for rinsing and drying of a silicon wafer. The methods involve cleaning the silicon wafer with hydrofluoric acid, immersing a silicon wafer in either boiling deionized water or a boiling hydrochloric acid solution, and then drawing the silicon wafer to dry from the boiling deionized water or the boiling aqueous hydrochloric acid solution. The aqueous hydrochloric acid solution preferably has a pH value of about 2.5. Oxidation of the surfaces of a silicon wafer is minimized by immersing the silicon wafer in either boiling water or a boiling aqueous hydrochloric acid solution thereby yielding a wafer having surfaces which are oxide free. A silicon wafer boiled in an aqueous hydrochloric acid solution experiences minimal surface roughening and has relatively smooth surfaces.