A method of forming a ring pattern for suppressing generation of misfit dislocations in a silicon wafer,

摘要

The present invention relates to a method of manufacturing a silicon wafer,¹⁹/ Cm 3 ), and a structure of the method for eliminating the mismatch potential inevitably.;Generally, a large concentration of impurity implantation process is required to form the source and drain of a semiconductor device, and an impurity implantation process of a large concentration is necessarily required in the process of manufacturing an X-ray mask, a micromachine, and a bonded wafer. However, according to the conventional impurity implantation method, an amorphous dislocation is generated, which deteriorates the electrical characteristics and mechanical characteristics of the layer in which the impurity is implanted at a large concentration.;In the present invention, a method of forming a ring-shaped region where impurity implantation is blocked on a wafer by using a ring pattern forming method for blocking a potential propagated into a wafer in consideration of conventional coupling, An X-ray mask and a micromachine which are excellent in electrical characteristics and have high mechanical properties and have a very small surface roughness, and a bonded wafer .