Method for producing a field-controlled thyristor and thyristor produced therewith with stable withstand voltage characteristics

摘要

A method for manufacturing a static induction type semiconductor device is to form gate zones (13) on a surface side of a semiconductor substrate (11), to cover the surface including the gate zones with an oxide film, to form through the oxide film apertures (15) for providing cathode zones (16) in the substrate, the apertures respectively overlapping partly each gate zone (13), and to form the cathode zones (16) with thermal diffusion of an impurity carried out through the apertures, the cathode zones (16) thus partly overlapping the gate zones (13). Concentration of the impurity as well as the depth of the diffusion at the thus made impurity diffusion zones can be thereby stabilized, and eventually the electric characteristics of the enhancement type, static induction type semiconductor device can be sufficiently made stable. IMAGE