HIGH WITHSTAND VOLTAGE BASE RESISTANCE THYRISTOR MANUFACTURING METHOD

摘要

PURPOSE: A method for manufacturing a high withstanding voltage base resistance thyristor is provided to prevent a breakdown voltage from being dropped at a cell edge by using an FLR(Field Limiting Ring). CONSTITUTION: A BRT(Base Resistance Controlled Thyristor) controls a thyristor by using a current of an IGBT(Insulated Gate Bipolar Transistor). The BRT includes an N+ drift layer, a P+ base layer, and an N+ emitter layer. A P base layer is formed on the N+ drift layer. The N+ emitter layer is formed on the P base layer.