Semiconducting metal-oxide coatings with adjustable semiconductor and layer properties and method for producing such coatings, and applications

摘要

The semiconducting polycrystalline metal-oxide coatings (1) (see Figure 1) can be produced on non-conducting, electronically conductive or conductively coated substrates (2, 3) which tolerate temperatures of at least 400 DEG C for relatively long times without substantial deformation or considerable conductivity losses (silica glasses, borosilicate glasses, ITO- or SnO2/F-coated glasses or polymers, metal-coated glasses or polymers, metals, oxide ceramics, carbide ceramics). They are composed of a dense, transparent oxide sublayer (4) depleted in pin holes and having a thickness of between 10 and 200 nm, preferably 30 to 100 nm, one or more thicker oxide layers (5) with a large electrochemically active surface having a high roughness factor (between 5 and 500, preferably 10 to 200), or with a fractal morphology (fractal dimension between 2.2 and 2.8) as well as a thin (5 to 200 nm, preferably 10 to 80 nm) a cover layer (6) which is very pure or has a defined doping level. The total thickness of the system is between 400 nm and 30 mu m, preferably between 1 mu m and 15 mu m. Such oxide systems can be used in various systems such as, for example, in battery or accumulator systems, in solar-power conversion cells or as heterogeneous catalyst systems for (for example photochemical) gas or liquid reaction catalysts. IMAGE