首页> 外国专利> Semiconductors - a gas sensor on the basis of a capacitively controlled field effect transistor (capacitive controlled field effect transistor, ccfet)

Semiconductors - a gas sensor on the basis of a capacitively controlled field effect transistor (capacitive controlled field effect transistor, ccfet)

机译:半导体-基于电容控制的场效应晶体管(电容控制的场效应晶体管,CCFET)的气体传感器

摘要

A semiconductor gas sensor, consisting of a field-effect transistor, the control and reference electrodes of which are lengthened and coupled to a capacitor arrangement which contains an air gap, is described. A gas-sensitive layer is arranged in the air gap. The transistor and the air gap are spatially separated from each other. It is possible to take gas measurements without gas diffusion through the gate electrode via the air gap and, by virtue of the separation of the air gap and the transistor, negative influences of the air gap on the drift behaviour and the lifetime of the sensor are eliminated. A monolithically integratable (monolithic integrated) and a hybrid design of the sensor are presented as exemplary embodiments.
机译:描述了一种由场效应晶体管组成的半导体气体传感器,其场效应晶体管的控制电极和参比电极被加长并耦合到包含气隙的电容器装置上。气敏层布置在气隙中。晶体管和气隙在空间上彼此分开。可以进行气体测量,而气体不会通过气隙通过栅电极扩散,并且由于气隙和晶体管的分离,气隙对传感器的漂移行为和寿命产生了负面影响被淘汰。作为示例性实施例,提出了传感器的单片可集成(单片集成)和混合设计。

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