首页> 外国专利> Production process for acoustic surface wave nano-arrays and acoustic surface wave nanoarrays thus produced.

Production process for acoustic surface wave nano-arrays and acoustic surface wave nanoarrays thus produced.

机译:由此产生的声表面波纳米阵列和声表面波纳米阵列的生产方法。

摘要

A method of manufacturing surface acoustic wave devices includes providing a dielectric substrate (11') with a plurality of channels (12') which open onto a substrate surface region and each of which accommodates a metallic electrode (14), the electrodes being recessed below the substrate surface region by an actual distance which at least equals a desired distance at which the electrodes have a minimum acoustic reflectivity, testing the performance of the device to ascertain at least the acoustic reflectivity of the electrodes, and etching at least the dielectric substrate, when it is ascertained during the testing that the acoustic electrode reflectivity is excessive, at least at the substrate surface region to a predetermined etching depth. The use of this method results in a device having reduced post-etching acoustic electrode reflectivity as a result of the thus obtained reduction in the difference between the actual and desired distances.
机译:一种制造表面声波装置的方法,包括提供具有多个通道(12')的介电基片(11'),该多个通道通向基片表面区域,并且每个通道容纳金属电极(14),该电极凹入下方基板表面区域的实际距离至少等于电极具有最小声反射率的所需距离,测试设备的性能以确定至少电极的声反射率,并至少蚀刻介电基板,当在测试期间确定声电极反射率过大时,至少在基板表面区域达到预定的蚀刻深度。由于如此获得的实际距离与期望距离之间的差的减小,使用该方法导致器件的蚀刻后声电极反射率降低。

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