Drain bias circuit for a field effect transistors (fets) of the power high, a microwave frequencies and adapted internally.

摘要

P drain bias circuit for a high power fet adapted internally (10) intended to be used in an amplifier operating in the field of microwaves. This circuit is characterized in that it comprises a line formed by a microstrip line at a low impedance (20), which has a length of lambdag / 2 to the normal operating frequency, lambdag being the length of the wave guided by the microphone - strip (20), and two coils of the rf choke (9a, 9b) which are connected to the center of the line to micro - strip having a low impedance of the aforementioned (20), thus dividing two routes the drain current (id), which is thus conveyed to the center of this line, which makes it possible to maintain a pressure of 50 ω, while ensuring a correct biasing of the fet (10). br / application to the electronics industry, in particular for the production of devices designed for use on board spacecraft. / p