Integrated circuit of the resistance, capacitance and transistor type, method of manufacturing such an integrated circuit and application to an oscillator.

摘要

P An integrated circuit of the resistance, capacitance and transistor type mainly comprises a non-self-aligned N diffusion bar (1) covered with a polysilicon plate (4), and an N (5) drain type diffusion, self-aligned by the polysilicon plate. The resulting structure is a quadrupole with resistance, capacitance and transistor distributed with as main characteristics a great compactness and a time of discharge of the capacity through the transistor independent of the dimensions of the structure. /P