High-frequency hybrid semiconductor integrated circuit structure including multiple coupling substrate and thermal dissipator

摘要

A high-frequency semiconductor hybrid integrated circuit device with desirable high-frequency properties and reduced floating capacitance that is easily manufactured at lower cost with reduced labor. A coupling dielectric substrate bearing conducting films as a circuit pattern is joined to a main dielectric substrate mounted on a heat radiating plate and bearing elements for high frequency amplification to a heat sink. The coupling dielectric substrate should have the same circuit constants at the high-frequency circuit as the main dielectric substrate.