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High yield electron-beam gate fabrication method for sub-micron gate FETS
High yield electron-beam gate fabrication method for sub-micron gate FETS
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机译:亚微米栅极FETs的高良率电子束栅极制造方法
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摘要
Yields of FETs such as HEMTs are significantly improved by establishing an elongate gate contact opening in a patterning material with the patterning material over-hanging the opening along both its elongate sides and its ends. A contact metal is next evaporated both into the opening and onto the adjacent patterning material, with the overhang producing a continuous gap around the periphery of the gate contact between it and the metal on the adjacent patterning material. The adjacent metal is then lifted-off without disturbing the gate contact. The inward tapered profile in the elongate direction of the contact opening is achieved with multiple parallel e-beam scans, while a similar profile is achieved at the ends of the elongate scans by increasing the electron beam dose in the vicinity of the scan ends, preferably by scanning the beam at a substantial angle to the elongate direction near the ends of the opening.
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