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Transistor arrangement for forming basic cell of master-slice type semiconductor integrated circuit device and master-slice type semiconductor integrated circuit device
Transistor arrangement for forming basic cell of master-slice type semiconductor integrated circuit device and master-slice type semiconductor integrated circuit device
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机译:用于形成主片型半导体集成电路器件的基本单元的晶体管布置和主片型半导体集成电路器件
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摘要
A master-slice type semiconductor integrated circuit device includes a first transistor, and a second transistor. The first and second transistors are arranged side by side in a first direction. The first and second transistors respectively have first and second gate electrodes extending in a second direction perpendicular to the first direction. The first gate electrode has a first portion in which two gate contacts arranged in the first direction can be made. The second gate electrode has a second portion in which two gate contacts arranged in the first direction can be made.
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