Process for manufacturing a semiconductor device using NH.sub.4 OH-H.sub. 2 O.sub.2 based etchant for Ti based thin film

摘要

If a resist pattern is formed on a titanium-based thin film, and a titanium-based thin film is etched with an NH.sub.4 OH--H.sub.2 O. sub.2 -- H.sub.2 O-based etching solution with an ammonia concentration of 3% or less, irregularities on pattern faces due to etching can be eliminated, and the amount of side etching at the titanium thin film below the resist pattern ends can be suppressed to 1 &mgr;m or less.