MOLECULAR BEAM EPITAXIAL DEVICE AND MANUFACTURE OF COMPOUND SEMICONDUCTOR THIN FILM AND COMPOUND SEMICONDUCTOR DEVICE USING THE EPITAXIAL DEVICE

摘要

PURPOSE: To provide a molecular beam vapor-depositing device equipped with an improved electron beam vapor-depositing device with which a compound semiconductor thin film having high Hall mobility and crystallinity can be obtained and the manufacturing methods of a compound semiconductor thin film and compound semiconductor device using the molecular beam vapor-depositing device. ;CONSTITUTION: An electron beam vapor-depositing device used for MBE devices as a solid source of carbon, etc., is constituted so that the discharge of a gas from the peripheral section of an electron gun can be suppressed in the case where growing crystals by removing in advance an impurity gas by bakeout by heating a heat shield 7 before starting the vapor deposition by providing a heating means composed of, for example, a heater 11. Consequently, a high-quality p-type compound semiconductor thin film having an extremely steep impurity profile which is indispensable to such a device as the HBT, etc., having a hetero-structure can be formed. Even when carbon is used as a dopant, the characteristics of an element using the thin film can be improved remarkably, because the Hall mobility of the thin film can be doubled form that of the conventional thin film to the same level as that obtained when Be is used.;COPYRIGHT: (C)1996,JPO