NON-VOLATILE RANDOM ACCESS MEMORY ARRAY

摘要

PROBLEM TO BE SOLVED: To achieve a compact and reliable non-volatile random access memory(NVRAM) device. ;SOLUTION: An NVRAM array 30 has a part 31 being related to a drive line segment DSL₁₁. The drive line segment DSL₁₁ is connected to a drive line DL₁ by a control transistor 32. In the arrangement, a conductive member that is the part of the drive line segment DLS₁₁ can be formed at the nearly the same height as a memory capacity 118. In the arrangement, furthermore, the drive lines DL₁ and DL₂ and bit lines BL₁₁, BL₁₂, BL₁₃, and BL₁₄ are formed not between transistors but on the control memory transistors 32 and 34, thus forming a compact and reliable NVRAM device.;COPYRIGHT: (C)1996,JPO