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Reflected electronic energy - loss microstructure measuring method

机译:反射电子能量损失显微组织测量方法

摘要

PURPOSE:To obtain a small-sized device easy to utilize by slantly radiating an incident electron beam on the sample surface at a small angle and measuring the energy loss spectrum of nonelastic scattered electrons reflected from the sample surface to measure the fine structure. CONSTITUTION:High-speed electrons are radiated to the surface of a sample to be measured 8 at a low incident angle with a device as shown by the figure, the energy loss spectrum of the nonelastic scattered electrons reflected from the surface of the sample to be measured 8 is measured by an energy analyzer 9, and the spectrum equivalent to the inner shell-excited X-ray absorption spectrum is determined. The vibration component (EXAFS) indicated in the spectrum and the X-ray absorption near edge structure (XANES) are analyzed to obtain the information on the surface arrangement and electronic state. Accordingly, measurement is performed by incident electrons, thus a large-scale facility such as the synchrotron orbital radiation light is not required and a small-sized electron source is sufficient, and the difficult problem of the spectroscopy is eliminated and the device is made easy to handle.
机译:目的:通过将入射电子束以小角度倾斜入射到样品表面上,并测量从样品表面反射的非弹性散射电子的能量损失谱来测量精细结构,从而获得易于使用的小型设备。组成:高速电子以如图所示的装置以低入射角辐射到待测样品的表面8,从样品表面反射的非弹性散射电子的能量损失谱为由能量分析仪9测量测量值8,并确定与内壳激发的X射线吸收光谱相当的光谱。分析频谱中指示的振动分量(EXAFS)和X射线吸收近边缘结构(XANES),以获得有关表面排列和电子状态的信息。因此,通过入射电子进行测量,因此不需要诸如同步加速器轨道辐射光之类的大型设备,并且小型电子源就足够了,并且消除了光谱学上的难题,并且使得该装置易于制造。处理。

著录项

  • 公开/公告号JP2525791B2

    专利类型

  • 公开/公告日1996-08-21

    原文格式PDF

  • 申请/专利权人 新技術事業団;

    申请/专利号JP19870021977

  • 发明设计人 宇佐美 誠二;藤川 高志;

    申请日1987-02-02

  • 分类号H01J37/252;G01N23/203;

  • 国家 JP

  • 入库时间 2022-08-22 03:58:38

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