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Thermal shock resistance silicon nitride sintered body and a method of manufacturing the same

机译:抗热震性氮化硅烧结体及其制造方法

摘要

PURPOSE:To obtain a silicon nitride sintered compact having strength at high temp. practically equivalent to the strength at ordinary temp. and excellent in thermal shock resistance by providing a sintered compact composed essentially of silicon nitride and compounds of rare earth elements and also forming pore aggregates of specific structure in this sintered compact. CONSTITUTION:A green compact is prepared by mixing raw materials consisting of silicon nitride powder, rare earth oxide powder, and carbide powder, and this green compact is calcined in a nitrogen atmosphere to decompose carbide, by which, in the resulting sintered compact, pores of =10mum are formed and also pore aggregates composed of the above-mentioned pores of 30-100mum diameter are formed at a rate of =10 pieces/mm2. It is preferable that a surface layer consisting of 5-100-mum silicioxide of rare earth element and silicon oxide is formed on the surface of the resulting sintered compact by subjecting this calcined compact to heat treatment at 1000-1500 deg.C in an oxygen-incorporating atmosphere since strength can be improved and also thermal shock resistance can be improved to a greater extent.
机译:目的:获得具有高温强度的氮化硅烧结体。几乎等同于常温下的强度。通过提供基本上由氮化硅和稀土元素的化合物组成的烧结体,并且在该烧结体中形成特定结构的孔聚集体,从而具有优异的耐热冲击性。组成:通过混合由氮化硅粉末,稀土氧化物粉末和碳化物粉末组成的原料来制备生坯,并将该生坯在氮气气氛中煅烧以分解碳化物,由此在所得烧结坯中形成孔形成<=10μm的孔,并且以> = 10个/ mm 2的速率形成由上述直径为30〜100μm的孔组成的孔聚集体。优选通过在氧气中在1000-1500℃下对煅烧后的成形体进行热处理,在所得烧结体的表面上形成由5-100μm的稀土元素的二氧化硅和氧化硅组成的表面层。 -结合气氛,因为可以提高强度并且还可以更大程度地提高抗热震性。

著录项

  • 公开/公告号JPH08733B2

    专利类型

  • 公开/公告日1996-01-10

    原文格式PDF

  • 申请/专利权人 日本碍子株式会社;

    申请/专利号JP19900127478

  • 发明设计人 高橋 章;渡邊 敬一郎;

    申请日1990-05-17

  • 分类号C04B35/584;

  • 国家 JP

  • 入库时间 2022-08-22 03:57:16

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