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CMOS bandgap voltage reference circuit

机译:CMOS带隙基准电压电路

摘要

In a CMOS bandgap reference circuit (100), the respective collectors of two lateral parasitic NPN transistors (106, 108) are connected to the two nodes of a current mirror (110). The emitter circuit of the first parasitic NPN transistor (106) includes a resistor (116), whereby the base-emitter junction current densities of the parasitic NPN transistors (106, 108) are maintained at a preselected ratio. A second resistor (118) common to the emitter circuit of both parasitic NPN transistors (106, 108) is provided, whereby the difference in base-emitter potentials between the first and second transistors has a positive temperature coefficient and the base-emitter voltage of the second parasitic NPN transistor (108) has a negative temperature coefficient so as to cancel out the above positive coefficient. The temperature independent volatage across the common resistor (118) and the base-emitter junction of the second transistor (108) is buffered by a unity gain amplifier (120). The output of the unity gain amplifier (120) is used to drive the parasitic NPN transistors (106, 108) and also comprises the reference voltage.
机译:在CMOS带隙基准电路(100)中,两个横向寄生NPN晶体管(106、108)的各个集电极连接到电流镜(110)的两个节点。第一寄生NPN晶体管(106)的发射极电路包括电阻器(116),由此,寄生NPN晶体管(106、108)的基极-发射极结电流密度保持在预选比率。提供两个寄生NPN晶体管(106、108)的发射极电路共用的第二电阻器(118),由此第一和第二晶体管之间的基极-发射极电势差具有正温度系数并且基极-发射极电压为第二寄生NPN晶体管(108)具有负温度系数,以抵消上述正系数。公共电阻器(118)和第二晶体管(108)的基极-发射极结之间的与温度无关的波动被单位增益放大器(120)缓冲。单位增益放大器(120)的输出用于驱动寄生NPN晶体管(106、108),并且还包括参考电压。

著录项

  • 公开/公告号JP2513926B2

    专利类型

  • 公开/公告日1996-07-10

    原文格式PDF

  • 申请/专利权人 SAMSUNG SEMICONDUCTOR INC;

    申请/专利号JP19900292187

  • 发明设计人 FURETSUDO TSUNNIEN CHEN;

    申请日1990-10-31

  • 分类号G05F3/30;H01L21/822;H01L21/8249;H01L27/04;H01L27/06;

  • 国家 JP

  • 入库时间 2022-08-22 03:56:57

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