PURPOSE: To form a contact hole for minimizing the magnitude of the contact hole, by forming the contact hole so that the minute contact hole can be realized. ;CONSTITUTION: After a first polysilicon pattern 23' is formed, anisotropic etching is performed, and a groove 27 is formed. A second polysilicon spacer 24' is formed in the groove 27 and at the side wall of the silicon pattern 23'. Thereafter, the spacer is used as the mask, and a contact hole 28 is formed.;COPYRIGHT: (C)1994,JPO
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