Influence of a glass properties and structural-phase transformations on electrophysical parameters of semiconductor systems “glass — Pb2Ru2O6, Ru2”

摘要

Combined influence of glass properties, ratio of its component initial concentrations and processes of structural-phase interaction of a glass matrix with a current-carrying phase on electrophysical parameters of “glass - RuO2, Pb2Ru2O6” systems has been investigated at its annealing. It was established, that the big contents of boron oxide and high acidity of glasses - is a principal cause of chemical lead ruthenate decomposition and formation of ruthenium dioxide at heterophase system annealing. The destruction of lead ruthenate begins at concentration of acid B2O3 ~ 10....20%. Surface resistivity of a film decreases, as RuO2 is characterized by higher conductivity. With increase of B2O3 dioxide concentration in glass the increase of conductivity begins at smaller Pb2Ru2O6 concentration. Changing of ratio Pb/SiO2 in structure of two-componental glasses results in changing of basicity, and also for reduction of the linear expansion temperature coefficient. Such changing of properties naturally influences and on resistor physical properties formation. With increase of PbO the acidity grows, what indicate that concentration of Ru2 grows, resistance sink. Reduction of ps at increase of PbO concentration proceeds under the parabolic law with extreme value at 80 % of PbO. The further increase of ps is connected with the fact that concentration of PbO is increased due to Pb2Ru2O6 decomposition. Introduction in the glass structure of bivalent metal oxides raises ps. Particularly the big influence have PbO, BaO, CaO. It is reflected in increase of ps of dielectric barriers between particles of conducting phase.