OVERLAP MEASUREMENT MARK FOR SEMICONDUCTOR ELEMENT AND OVERLAP ERROR MEASUREMENT METHOD BETWEEN MULTIPLEX PATTERNS OF SEMICONDUCTOR ELEMENT USING THE SAME

摘要

PURPOSE: To measure an overlap error between multiplex patterns formed on the die of a product in a wafer for one time, by providing respectively two first and second overlap marks whose constant intervals are detached in specified directions and a third overlap mark formed on the inner side of them. ;CONSTITUTION: Two first overlap marks 11 formed in such a way that the constant intervals are detached in a state parallel to the Y-axis of a scribe line, two second marks 12 formed so that the constant intervals are detached in a state parallel to the X-axis of the scribe line and a third overlap mark 13 formed on the inner side of the first and the second overlap marks 11 and 12 are provided. The first overlap marks 11 and the second overlap marks 12 are formed by making them incline at the angle of 0-90°, at the angle of 45° if desirable, by leaving the detached distances of 0.5-2 μm in mutually adjacent parts, for example. The first and the second overlap marks 11 and 12 are formed by conductive substances and the third overlap mark 13 is formed by photoresist.;COPYRIGHT: (C)1996,JPO