A method and structure of enhancing the current gain of bipolar junction transistors

摘要

The present invention teaches a method and structure of enhancing the current gain characteristics of a bipolar junction transistor. The method comprises the step of forming a patterned silicon dioxide layer superjacent a semiconductor substrate comprising a base, an emitter and a collector, such that a carrier current conducts between the base and the emitter. The silicon dioxide layer forms an interface on the substrate at the emitter. Further, a first polysilicon layer is formed superjacent both the patterned silicon dioxide layer and the interface, and is implanted with O₂. Subsequently, the substrate is heated such that the emitter interface is obstructed by a silicon dioxide formation, thereby blocking a portion of carrier current from passing through the interface.