BiCMOS device with surface channel PMOS transistor and method of manufacturing the same

摘要

BiCMOS 10 includes bipolar transistor 60, PMOS transistor 64, and p-type polycrystalline silicon resistor 70. The bipolar transistor 60 includes a collector region formed by emitter electrode 30, base region 26, and well region 18. The PMOS transistor 64 includes a source / drain region 52, a gate electrode 40, and a gate oxide 28. The PMOS transistor 64 also includes the LDD region 44. The emitter electrode 30 and the gate 40 are formed outside the same polycrystalline silicon layer, and therefore have the same thickness. Ideally, the emitter electrode 30 and the gate electrode 40 become silicide.