Manufacturing method of BiCMOS device with surface channel PMOS transistor

摘要

BiCMOS 10 includes bipolar transistor 60, PMOS transistor 64, and p-type polycrystalline silicon resistor 70. Bipolar transistor 60 includes a collector region formed by emitter electrode 30, base region 26, and well region 18. PMOS transistor 64 includes a source / drain region 52, a gate electrode 40, and a gate oxide 28. PMOS transistor 64 also includes an LDD region 44. Emitter electrode 30 and gate 40 are formed outside the same polycrystalline silicon layer and therefore have the same thickness. Ideally, the emitter electrode 30 and the gate electrode 40 are silicides.